Surface Mount Mosfet

Testing Surface Mount Mosfets

The aim of using surface-mount packages is to reduce the pc board size, if not, more importantly, to simplify the electrical behavior of these MOSFETs in parallel. Mounting D 2 PAK devices on a pc board holds the promise of reduced pc board space, shorter track lengths and easier driving of the MOSFETs. PVA3324NSPBF, Transistor Output - FET & MOSFET, Infineon The PDV13 series from Infineon is a single pole, normally open, solid-state replacement for electromechanical relays used for general. SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and ESD protection up to 2kV. MARKING CODE: C7003. 25V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package. The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. Industry standard surface-mount power package; Product qualification according to.

WEITRON

4N60P Datasheet Preview

Surface Mount N-Channel Power MOSFET

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Surface Mount N-Channel Power MOSFET

Description:

The WEITRON 4N60 is a high voltage MOSFET and is designed

to have better characteristics, such as fast switching time, low

gate charge, low on-state resistance and have a high rugged

avalanche characteristics. This power MOSFET is usually used

at high speed switching applications in power supplies, PWM

motor controls, high efficient DC to DC converters and bridge

Features:

RDS(ON) =2.5 Ohms @VGS

=10V

1 GATE

* Avalanche energy Specified

DRAIN CURRENT

DRAIN SOURCE VOLTAGE

D-PAK3/(TO-251)

TO-220 TO-220F

Maximum Ratings(T A=25 C Unless Otherwise Specified)

Symbol

Unit

Gate-Source Voltage

600

VGSS ±30

Continuous Drain Current @ TC=25˚C

Pulsed Drain Current, TP Limited by TJMAX - (Note 1)

2.8

IDM 16

Avalanche Energy, Repetitive, Limited by TJMAX

EAR 10.6 mJ

dv/dt

Total Power Dissipation

4N60F(T C=25˚C)

4N60P( Derate above25˚C)

4N60I/D( Derate above25˚C)

PD 0.8 W

0.69

TJ,Tstg

˚C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

http:www.weitron.com.tw

13-Apr-2011